cystech electronics corp. spec. no. : c426m3 issued date : 2012.02.07 revised date : page no. : 1/8 MTP452M3 cystek product specification 30v p-channel enhancement mode mosfet MTP452M3 features ? single drive requirement ? low on-resistance, r ds(on) =50m (typ.)@v gs =-10v, i d =-3.2a r ds(on) =72m (typ.)@v gs =-4.5v, i d =-2.6a ? ultra high speed switching ? pb-free package symbol outline MTP452M3 sot-89 d g d s g gate s source d drain absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current @ t a =25 c i d -5.3 a continuous drain current @ t a =70 c i d -4.2 a pulsed drain current i dm -20 *1, 3 a total power dissipation (t a =25 ) 2 *2 p d w total power dissipation (t a =70 ) 1.3 *2 operating junction and storage temperature tj, tstg -55~+150 c note : *1 . pulse width limited by maximum junction temperature *2. surface mounted on 1 in 2 copper pad of fr-4 board; 270 c/w when mounted on min. copper pad *3. pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c426m3 issued date : 2012.02.07 revised date : page no. : 2/8 MTP452M3 cystek product specification thermal performance parameter symbol limit unit thermal resistance, junction-to-ambient rth,ja 62.5 c/w note : surface mounted on 1 in2 copper pad of fr-4 board. electrical characteristics (tj=25 c, unless otherwise noted) symbol min. typ. max. unit test conditions static bv dss -30 - - v v gs =0, i d =-250 a v gs(th) -1.0 -1.6 -2.5 v v ds =v gs , i d =-250 a g fs - 5.6 - s v ds =-5v, i d =-3a i gss - - 100 na v gs = 20v, v ds =0 - - -1 a v ds =-30v, v gs =0 i dss - - -25 a v ds =-24v, v gs =0 (tj=70 c) - 50 60 i d =-3.2a, v gs =-10v *r ds(on) - 72 80 m i d =-2.6a, v gs =-4.5v dynamic ciss - 619 - coss - 55 - crss - 49 - pf v ds =-25v, v gs =0, f=1mhz *t d(on) - 7 - *t r - 3 - *t d(off) - 20 - *t f - 15 - ns v ds =-15v, i d =-1a, v gs =-10v r g =3.3 *qg - 11 - *qgs - 2.3 - *qgd - 4.3 - nc v ds =-15v, i d =-5.3a, v gs =-10v, source-drain diode *v sd - -0.8 -1.2 v v gs =0v, i s =-1.2a *trr - 22 - ns *qrr - 18 - nc i s =-3.2a, v gs =0, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping marking MTP452M3 sot-89 (pb-free) 1000 pcs / tape & reel 452
cystech electronics corp. spec. no. : c426m3 issued date : 2012.02.07 revised date : page no. : 3/8 MTP452M3 cystek product specification typical characteristics typical output characteristics 0 5 10 15 20 012345 -v ds , drain-source voltage(v) -i d , drain current (a) -v gs =2.5v -v gs =3v -v gs =3.5v -v gs =4v -v gs =4.5 v -v gs =10 v -v gs =9v -v gs =8v -v gs =7v -v gs =6v -v gs =5v brekdown voltage vs ambient temperature 28 30 32 34 36 38 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , drain-source breakdown voltage (v) i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.001 0.01 0.1 1 10 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-10v v gs =-4.5v v gs =-2.5v v gs =-3v v gs =-3.5v v gs =-4v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 -i dr , reverse drain current (a) -v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 024681 gate-source voltage-vgs(v) r ds( on) , static drain-source on- state resistance(m) 0 i d =-3a i d =-1.3a drain-source on-state resistance vs junction tempearture 20 30 40 50 60 70 80 90 100 110 120 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds( on) , static drain-source on-state resistance(m) v gs =-4.5v, i d =-2.6a v gs =-10v, i d =-3.2a
cystech electronics corp. spec. no. : c426m3 issued date : 2012.02.07 revised date : page no. : 4/8 MTP452M3 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss normalized threshold voltage vs junction tempearture 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) -v gs( th) ,normalized threshold voltage i d =-250 a forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance-(s) v ds =-10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 02468101214 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-15v i d =-5.3a maximum safe operating area 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current (a) dc 10ms 100ms 1ms 100 s 10 s t a =25c, tj=150c v gs =-10v single pulse maximum drain current vs junctiontemperature 0 1 2 3 4 5 6 7 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =-10v
cystech electronics corp. spec. no. : c426m3 issued date : 2012.02.07 revised date : page no. : 5/8 MTP452M3 cystek product specification typical characteristics(cont.) transient thermal response curves 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *r ja (t) 4.r ja =62.5c/w
cystech electronics corp. spec. no. : c426m3 issued date : 2012.02.07 revised date : page no. : 6/8 MTP452M3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c426m3 issued date : 2012.02.07 revised date : page no. : 7/8 MTP452M3 cystek product specification recommended wave soldering condition peak temperature soldering time product pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c426m3 issued date : 2012.02.07 revised date : page no. : 8/8 MTP452M3 cystek product specification sot-89 dimension *: typical marking: 452 dim inches millimeters inches millimeters min. max. min. max. dim min. max. min. max. a 0.1732 0.1811 4.40 4.60 f 0.0583 0.0598 1.48 1.527 b 0.1594 0.1673 4.05 4.25 g 0.1165 0.1197 2.96 3.04 c 0.0591 0.0663 1.50 1.70 h 0.0551 0.0630 1.40 1.60 e f g c b a i d h 3 2 1 device name date code style: pin 1. gate 2. drain 3. source 3-lead sot-89 plastic surface mounted package cystek package code: m3 d 0.0945 0.1024 2.40 2.60 i 0.0138 0.0161 0.35 0.41 e 0.01417 0.0201 0.36 0.51 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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